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Patents - ELECTRICAL AND ELECTRONIC APPLICATIONS

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Category list

January 2007
ELECTRICAL AND ELECTRONIC APPLICATIONS
WO 2006/113859 A2 (10/26/2006) Yazaki Corporation
Meyers D, Ganguli R, Robinson T, Gump R, Colbern S, Kirkbir F.
PHOTOMASK ASSEMBLY INCORPORATING A METAL/SCAVENGER PELLICLE FRAME
A photomask assembly consists of a photomask substrate and a composite pellicle frame that includes both a metallic frame component and a scavenger component, which is a metal oxide such as aluminum, boron, cerium, cobalt, copper, erbium, hafnium, lanthanum, yttrium, zirconium etc, preferably, zirconium, yttrium, or mixtures thereof.
WO 2006/104196 A1 (10/03/2006) Mitsubishi Kagaku Media Co. Ltd.
Miyazawa T, Kurose Y.
OPTICAL RECORDING MEDIUM, METAL COMPLEX COMPOUND AND ORGANIC DYE COMPOUND
An optical recording medium having a recording layer of improved light stability, capable of recording and regeneration of high-density optical information by short-wavelength laser beam. The recording layer contains a pyridone azo organic dye having a 6-hydroxy-2-pyridone structure as a coupler component and an isoxazole, 1,2,4-triazole or pyrazole as a diazo component, coordinated to a metal, such as nickel, cobalt, iron, zinc, copper or manganese.
WO 2006/102318 A1 (09/28/2006 Applied Materials, Inc.
Stewart M.P, Weidman T.W, Shanmugasundram A, Zhu Z, Gandikota S, Gelatos A.V, Rosato J.J, Eaglesham D.J.
ELECTROLESS DEPOSITION PROCESS ON A CONTACT CONTAINING SILICON OR SILICIDE
Substrates in electroless deposition processes contain a contact aperture having exposed silicon and silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof.
WO 2006/077041 A1 (07/27/2006) Corus Aluminium Walzprodukte GmbH
Wittebrood A.J, Wijenberg J.H.O.J.
METHOD OF ELECTROPLATING AND PRE-TREATING ALUMINIUM WORKPIECES
A metal layer consisting of nickel, iron, cobalt, or alloys thereof is applied onto the surface of an aluminium or aluminium alloy workpiece, by pre-treating the surface by cathodic activation in a bath containing sulphuric acid and nickel, iron or cobalt metal-ions and applying a metal layer by electroplating the pretreated workpiece.
WO 2006/068277 A1 (06/29/2006) Sodick Co., Ltd
Nabekura N, Sano S.
ELECTRODE FOR ELECTRIC DISCHARGE MACHINING AND ELECTRIC DISCHARGE MACHINING METHOD
A sintered electrode for electric discharge machining consists of a continuous phase composed of a conductive region and a dispersed phase composed of a micro polycrystalline diamond. The conductive region is cobalt, nickel, a cobalt-nickel alloy, or cemented carbide. The diamond imparts good mechanical strength and thermal diffusivity to the electrode.
July 2006
WO2006/033957 A1 (03/30/2006) Intel Corporation
Dubin V. Cheng C-C. Chowdhury S.
METHOD TO FABRICATE COPPER-COBALT INTERCONNECTS
Copper-cobalt interconnects are formed by rinsing a copper substrate with deionized water, then with a heated mild etchant solution. The substrate is rinsed with a portion of a heated electroless plating solution, which may contain cobalt. The remainder is mixed with a reducing agent to form a self-catalytic bath, and this applied to the substrate.
WO2006/032183 A1 (03/30/2006) Beijing University Of Chemical Technology
Duan X. Yang W. Wang Y.
A METHOD OF MANUFACTURING A LAYERED CoAl DOUBLE HYDROXIDE COMPOSITE METAL OXIDES ELECTRODE MATERIALS
Layered CoAl double hydroxide composite metal oxides (Co-Al-LDHs) for use as electrode materials for supercapacitors are co-precipitated in an all return mixing liquid membrane reactor, by mixing cobalt, aluminium and alkali solutions, controlling the conditions of nucleation and growth, then baking at certain temperature.
WO/2006/044184 A2 (04/27/2006) Corning Incorporated, Reddy, Kamjula. P.
Schroeder, Joseph F., Streltsov, Alexander.
Morena, Robert M., Powley, Mark L.
Reddy K.P. Schroeder J.F. Streltsov A. Morena R.M. Powley M.L.
WO2006/003922 A1 (01/12/2006) Hoya Corporation
Sonobe Y. Umezawa T. Takasu C.
PERPENDICULAR MAGNETIC RECORDING DISK AND PROCESS FOR PRODUCING THE SAME
The magnetic recording layer of a perpendicular magnetic recording disk is composed of a ferromagnetic layer containing silicon in the interstices of crystal grains containing cobal, separated by a spacer layer from a laminate layer, the first layer of which contains cobalt or a Co alloy and a second layer containing palladium or platinum.
WO2005/120139 A1 (12/15/2005) Mitsui Mining & Smelting Co., Ltd.
Okada K. Takahashi M.
SURFACE-TREATED COPPER FOIL AND FLEXIBLE COPPER-CLAD LAMINATE PLATE AND FILM CARRIER TAPE MANUFACTURED BY USE OF THE SURFACE-TREATED COPPER FOIL
To improve the adhesiveness of the glossy surface of an electrolytic copper foil for a polyimide resin substrate is a surface treating layer comprised of 65-90 wt % of nickel or cobalt and 10-35 wt % of zinc, relative to the total weight of the layer, and is a nickel-zinc alloy layer or a cobalt-zinc alloy layer having a weight of 30 to 70 mg/m2.
January 2006
WO 2005/101472 A1 (10/27/05) Renesas Technology Corp.
Suzuki Y, Okutani K.
METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
A collimator is disposed between a wafer and a target. A cobalt film with a thickness of about 10 nm is deposited on the wafer heated to 300C or above, a silicon nitride film is deposited on the cobalt film, and a cobalt disilicide layer is formed by siliced reaction.
WO 2005/062678 A3 (10/06/05) IDEMITSU KOSAN CO. LTD
Tomai S, Inoue K, Shibuya T, Sakai T, Matsubara M.
ORGANIC ELECTROLUMINSCENCE DEVICE, CONDUCTIVE LAMINATE AND DISPLAY
A2 published (07/07/05)
WO 2005/085957 A1 (09/15/05) ADVANCED Technology Materials Inc.
Rath M, Bernhard D, Minsek D, Korzenski M, Baum T.
COMPOSITION AND PROCESS FOR POST-ETCH REMOVAL OF PHOTORESIST AND/OR SACRIFICIAL ANTI-REFLECTIVE MATERIAL DEPOSITED ON A SUBSTRATE
A composition for high-efficiency removal of photoresist and/or sacrificial anti-reflective coating (SARC) materials from a substrate, may be used in aqueous medium, e.g. with chelator, surfactant, and/or co-solvent species in the manufacture of integrated circuitry without adverse effect on metal on the substrate such as copper, aluminum and/or cobalt alloys.
WO 2005/081667 A2 (09/09/05) Iowa State University Research Foundation Inc.
Jiles D, paulsen J, Snyder J, Lo C, Ring A, Bormann K.
COBALT FERRITE BASED MAGNETOSTRICTIVE MATERIALS FOR MAGNETIC STRESS SENSOR AND ACTUATOR APPLICATIONS
Magnetostrictive material based on cobalt ferrite that is substituted with transition metals (such as manganese, chromium, zinc or copper (Cu) or mixtures thereof by substituting the transition metals for iron or cobalt to form substituted cobalt ferrite that provides mechanical properties that make the substituted cobalt ferrit material effective for use as sensors and actuators.
WO 2005/083157 Mitsui Mining & Smelting Co. Ltd
Higuchi T.
SURFACE-TREATED COPPER FOIL HAVING GRAYED SURFACE, PROCESS FOR PRODUCING THE SAME AND ELECTROMAGNETIC WAVE SHIELDING CONDUCTIVE MESH FOR FRONT PANEL OF PLASMA DISPLAY WHEREIN USE IS MADE OF THE SURFACE-TREATED COPPER FOIL
A surface-treated copper foil with one surface having undergone graying treatment, resulting from formation of a cobalt sulfate plating layer by electrolyzing a cobalt plating solution containing cobalt sulfate (heptahydrate) at a given current density onto a rough surface of electrolytic copper foil, etc. to thereby form a corrosion prevention layer.
WO 2005/083523 A1 (09/09/05) Mallinckrodt baker Inc.
Hsu C-P.
MICROELECTRONIC CLEANING COMPOSITION CONTAINING HALOGEN OXYGEN ACIDS, SALTS AND DERIVATIVES THEREOF
Compositions for cleaning microelectronic substrates, containing halogen acids, salts and derivatives thereof with improved compatibility with silicon dioxide, sensitive low-k or high-k dielectrics and copper, tungsten, tantalum, nickel, gold, cobalt, palladium, platinum, chromium, ruthenium, rhodium, iridium, hafnium, titanium, molybdenum, tin and other metallization.
WO 2005/041252 A3 (09/09/05) International business Machines Corporation
Chen J, Chan K, Huang S, Nowak E.
SPLIT POLY-SiGe/POLY-Si ALLOY GATE STACK
Amended claims A3 previously published (07/14/05)
WO 2005/078171 A1 (08/25/05) Mitsui Mining & Smelting co. Ltd
katsurayama M
ZINC TUNGSTENATE SINGLE CRYSTAL AND METHOD FOR PREPARATION THEREOF
A zinc tungstenate single crystal, containing lithium, cobalt, manganese or sodium is produced by adding the elements when the single crystal is being grown. The resultant single crystal suffers reduced radiation damage with time and exhibits a reduced afterglow when used as a single crystal for a radiation detector.
WO 2005/078785 A1 (08/25/05) Stmicroelectronics (Crolles 2) Sas, Koninklijki Philips Electronics
Regnier C, Humbert A.
METHOD FOR THE CREATION OF AN INTEGRATED ELECTRONIC CIRCUIT AND INTEGRATED ELECTRONIC CIRCUIT THUS OBTAINED
An integrated circuit comprises a temporary material on a substrate, part of which is made of an absorbent material. The circuit is heated in such a way that the temporary material which comprises cobalt, nickel, titanium, tantalum, tungsten, molybdenum, gallium, indium, silver, gold, iron and/or chrome is absorbed into the absorbent part of the substrate.
WO 2005/073998 A2 (08/11/05) Koninklijke Philips Electronics N.V. S.A.E.S. Getters S.P.A.
De Maagt B, Marien L, kamp R, Boffito C.
COMPACT HIGH-PRESSURE DISCHARGE LAMP AND METHOD OF MANUFACTURING
A high-pressure discharge lamp has an outer envelope in which a discharge vessel is arranged enclosing a discharge space with an ionizable filling. A getter made of an alloy of zirconium and aluminum or of zirconium and cobalt in the outer envelope is used for pumping out residual nitrogen from the outer enveloped after sealing off the discharge lamp.
WO 2005/071702 A1 (08/04/05) Kyushu Tlo Company Limiteed
Miura N, Prasad K
ELECTRODE MATERIAL FOR REDOX CAPACITOR AND PROCESS FOR PRODUCING THE SAME
A novel electrode material for a redox capacitor of high specific capacity, high output density, high energy density, high stability and low cost, comprises a nano-structure of ?50 nm size containing an amorphous oxide of manganese, nickel, tin, indium, tungsten, molybdenum, vanadium, cobalt, titanium or iron.
WO 2005/041252 A3 (07/14/05) International Business Machines Corporation
Chen J, Chan K, Huang S, Nowak E.
SPLIT POLY-SiGe/POLY-Si ALLOY GATE STACK
WO 2005/062678 A2 (07/07/05) IDEMITSU KOSAN CO. LTD
Tomai S, Inoue K, Shibuya T, Sakai T, Matsubara M.
ORGANIC ELECTROLUMINSCENCE DEVICE, CONDUCTIVE LAMINATE AND DISPLAY
An organic electroluminescence device comprises a luminescent layer interposed between the negative and positive electrodes where part of the positive electrode contains lanthanum, cerium, neodymium, samarium or europium and at least one of chromium, tungsten, tantalum, niobium, silver, palladium, copper, nickel, cobalt, molybdenum, platinum or silicon.
WO 2005/057673 A1 (06/23/05) Dupont
He T, Krajewski J.J, Subramanian M.
A METHOD OF PREPARATION FOR THE HIGH PERFORAMNCE THERMOELECTRIC MATERIAL INDIUM-COBALT-ANTIMONY
Thermoelectric compositions of the formula InxCo4Sb12 (0
WO 2005/053121 A1 (06/09/05) Kuzmin, Oleg Victorovich
Kuzmin O.V.
LASER MATERIAL
Scandium orthoborate-based laser materials eg for monocrystals for solid-state diode-pumped lasers, have a general formula RxR1yMzSc1-x-y-zBO3 wherein R is La or Ce or Gd; R1y is one or several cations of Pr or Nd or Sm or Tb or Dy or Ho or Er or Tm or Yb or the mixture of cations and M is a Sc cation or the mixture of Cr or Ti or V or Ni or Co or Mn.

 

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